2013. 6. 03 1/6 semiconductor technical data KF4N60F n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 600v, i d = 4a h drain-source on resistance : r ds(on) =2.5 ? @v gs = 10v h qg(typ) = 10nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. g d s pin connection to-220is (1) a a b b c c d d e e f f g g h h 1.47 max1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate2. drain 3. source * single gauge lead frame characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 4* a @t c =100 ? 2.4* pulsed (note1) i dp 12* single pulsed avalanche energy(note 2) e as 130 mj repetitive avalanche energy(note 1) e ar 3.3 mj peak diode recovery dv/dt(note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 37.9 w derate above 25 ? 0.3 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.3 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w downloaded from: http:///
2013. 6. 03 2/6 KF4N60F revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.61 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =2a - 1.9 2.5 ? dynamic total gate charge q g v ds =480v, i d =4a v gs =10v (note4,5) - 10 - nc gate-source charge q gs - 2.3 - gate-drain charge q gd - 4.1 - turn-on delay time t d(on) v dd =300v i d =4a r g =25 ? (note4,5) - 30 - ns turn-on rise time t r - 30 - turn-off delay time t d(off) - 70 - turn-off fall time t f - 30 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 480 - pf output capacitance c oss - 54 - reverse transfer capacitance c rss - 6.0 - source-drain diode ratings continuous source current i s v gs 2013. 6. 03 3/6 KF4N60F revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 2 68 41 0 02 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d 02 5 0.9 1.0 1.31.2 1.1 50 75 100 125 150 175 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 reverse drain current i s (a) 10 64 2 0 8 14 23 8 567 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i ds = 2a v gs = 0v i ds = 250 100 c 25 c 150 c 25 c 11 0 0 0.1 10 10 -2 10 -1 10 0 10 1 v gs =10v, 7v v gs =10v v gs =7v v ds =20v v gs =5v downloaded from: http:///
2013. 6. 03 4/6 KF4N60F revision no : 0 gate - charge q g (nc) 0 1210 62 4 8 14 16 6 21 0 81 2 4 0 fig 8. q g - v gs gate - source voltage v gs (v) 10 4 10 3 10 2 10 1 10 0 i d =4a v ds = 480v drain - source voltage v ds (v) capacitance (pf) fig 7. c - v ds 0 1 02 03 04 0 fig10. transient thermal response curve transient thermal resistance ( ? /w) time ( sec ) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 - r th(j-c) = 3.3 ? /w - duty factor, d= t 1 /t 2 t 1 t 2 p dm dut y=0.5 sing le pulse 0.05 0.1 0.2 0.01 fig 9. safe operation area 10 2 10 1 10 -1 10 0 10 -2 drain current i d (a) drain - source voltage v ds (v) 10 1 10 0 10 2 10 3 t c = 25 t j = 150 single nonrepetitive pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) 0.02 c iss c oss c rss downloaded from: http:///
2013. 6. 03 5/6 KF4N60F revision no : 0 fig11. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig13. resistive load switching fig12. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2013. 6. 03 6/6 KF4N60F revision no : 0 fig14. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
|
